Publications related to Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

Related publications (38)

How Reproducible is the Synthesis of Zr-Porphyrin Metal-Organic Frameworks? An Interlaboratory Study

Metal-organic frameworks (MOFs) are a rapidly growing class of materials that offer great promise in various applications. However, the synthesis remains challenging: for example, a range of crystal structures can often be accessed from the same building b ...

Wiley-V C H Verlag Gmbh2024

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Michele Kotiuga

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...

Nature Portfolio2024

Characterization of low-temperature creep and stress relaxation of an iron-based shape memory alloy (Fe-SMA) using in-situ synchrotron diffraction

Christian Leinenbach, Meet Jaydeepkumar Oza

Iron-based shape memory alloys (Fe-SMAs) are e-merging materials with extensive application in civil structures owing to their unique properties, including the shape memory effect. However, it is crucial to understand the time dependent behavior of Fe-SMAs ...

ELSEVIER SCI LTD2024

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

Zenodo2023

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hind ...

2023

Tailor-made Piezoelectric Elastomer Materials

Francis Owusu

Recent advancements in miniature devices with higher computational capabilities and ultralow power consumption have accelerated the development of wearable sensors, actuators, and energy harvesters everywhere. The ultimate aim of such a technological revol ...

EPFL2023

Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics

Dragan Damjanovic

We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible hightemperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations wellaligned along the [001] axis and associated strain field ...

AMER PHYSICAL SOC2023

Effect of Mo addition on the mechanical and tribological properties of magnetron sputtered TiN films

Sami Rtimi

Ternary-based titanium nitride (TiN) thin films have drawn attention toward rational applications due to their wear resistance, high hardness, and corrosion resistance. The influence of Mo content on the structural, tribo-logical, and mechanical properties ...

ELSEVIER SCIENCE SA2023

Surface Passivation of FAPbI3-Rich Perovskite with Cesium Iodide Outperforms Bulk Incorporation

Michael Graetzel, Jacques-Edouard Moser, Shaik Mohammed Zakeeruddin, Mounir Driss Mensi, Jun Ho Yum, Kevin Sivula, Thomas Paul Baumeler, Essa Awadh R Alharbi, Brian Irving Carlsen, Jing Gao, George Cameron Fish, Felix Thomas Eickemeyer, Lukas Pfeifer, Georgios Kakavelakis

Metal halide perovskites (MHPs) have shown an incredible increase in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX (X = I–, Br–, Cl–), the most commonly used cations to ...

2023

On-Demand Cross-Linkable Bottlebrush Polymers for Voltage- Driven Artificial Muscles

Frank Nüesch, Francis Owusu, Yeerlan Adeli

Dielectric elastomer actuators (DEAs) generate motion resembling natural muscles in reliability, adaptability, elongation, and frequency of operation. They are highly attractive in implantable soft robots or artificial organs. However, many applications of ...

AMER CHEMICAL SOC2023

Topological Analysis of the Experimental Electron Density in Multiferroic Antiferromagnet Ba2MnGe2O7

Bálint Náfrádi

In the field of magnetoelectric coupling, especially via the spin-dependent metal-ligand d-p hybridization mechanism found in multiferroic Ba2MGe2O7 (M = Mn, Co), detailed knowledge of the microscopic structural parameters is essential, also for the theore ...

Institute of Electrical and Electronics Engineers2022

Synthesis and investigation of the thermal proper- ties of [Co(N H-3)(6)] [Co(C2O4)(3)]center dot 3H(2)O and [Ir(NH3)(6)][Ir(C2O4)(3)]

Ilia Kochetygov

The complexes [Co (NH3)(6)][Ir (C2O4)(3)] and [Ir(NH3)(6)][Co (C2O4)(3)center dot H2O have previously been synthesized and their thermal properties studied. The [Ir(NH3)(6)][Ir(C2O4)(3)] and [Co(NH3)(6)][Co(C2O4)(3)]center dot 3H(2)O complexes considered h ...

INT UNION CRYSTALLOGRAPHY2022

Collaboration with Hans-Beat Burgi: crystallography at Bern and Lausanne

Dieter Schwarzenbach

INT UNION CRYSTALLOGRAPHY2022

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset

The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) layer has been identified as the next step to further increase the conversion efficiency of current mainstream cry ...

AMER CHEMICAL SOC2022

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

Igor Stolichnov, Mihai Adrian Ionescu, Felix Risch

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...

Nature Portfolio2022

Dataset for "Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties"

Anna Fontcuberta i Morral, Dirk Grundler, Nicolas Tappy, Santhanu Panikar Ramanandan, Anna Kúkol'ová, Mirjana Dimitrievska

Raw data associated to the manuscript “Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties", CrystEngComm 2021, XXXX, XXX, XXX-XXX There is currently an emerging drive to computational materials design ...

Zenodo2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021