During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...
For many scientific applications, electron multiplying charge coupled devices (EMCCDs) have been the sensor of choice because of their high quantum efficiency and built-in electron amplification. Lately, many researchers introduced scientific complementary ...
Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...
Graphene has some drawbacks, like the absence of an electronic band gap which leads to only small gate switching ratios, and its fast carrier recombination that limits its use in optoelectronics. In order to overcome these issues, the aim of this thesis wa ...
A variety of smart imaging and neuromorphic applications perform time-domain image acquisition in order to imitate biological systems and reduce the growing transmission bandwidth of the modern imaging devices. Because they operate in time-domain, they req ...
Similar to analog silicon photomultipliers (SiPMs), digital SiPMs (dSiPMs) essentially consist of an array of single-photon avalanche photodiodes (SPADs). Instead of a passive quench resistor, however, an active quenching circuit is locally integrated with ...
In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...
In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In t ...
Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...
We report on the mixed photovoltaic/photoconductive operation mode of a visible blind photodetector based on GaN nanowires containing a p-i-n junction. The photodetector operates as a photovoltaic device close to zero bias and exhibits a photoconductive ga ...
