Publication

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Giovanni De Micheli, Yusuf Leblebici, Davide Sacchetto, Michail Zervas, Yüksel Temiz
2012
Journal Articles

Abstract

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.

Official source

https://infoscience.epfl.ch/entities/publication/43bb5bec-7fb9-4dd1-a1a4-89f24025f454

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Chat with Graph Search

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations