Publications related to Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Related publications (38)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Memristive Control of Plasmon-Mediated Nonlinear Photoluminescence in Au Nanowires

Konstantin Malchow

Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from a nonequilibrium heated electron distribution generated at the surface of metallic nanostructures by ultrafast pulsed laser illumination. N-PL is sensitive to surface morphology ...

Amer Chemical Soc2024

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Kapil Bhardwaj, Sandro Carrara, Junrui Chen

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

FlexiMem: Flexible Shared Virtual Memory for PCIe-attached FPGAs

Paolo Ienne, Canberk Sönmez, Mohamed Mahfouz Ahmed Kotb Shahawy, Cemalettin Cem Belentepe

Shared Virtual Memory (SVM) is a mechanism that allows host-side applications and FPGA accelerators to access the same virtual address space. It enables accelerating algorithms with unpredictable memory access patterns by making transparent pointer sharing ...

Institute of Electrical and Electronics Engineers Inc.2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Nanofluidic logic with mechano-ionic memristive switches

Aleksandra Radenovic, Andras Kis, Nathan Cyprien Arsène Ronceray, Andrey Chernev, Edoardo Lopriore, Yunfei Teng, Vasily Artemov, Riccardo Chiesa, Théo Denis Tobias Emmerich

Neuromorphic systems are typically based on nanoscale electronic devices, but nature relies on ions for energy-efficient information processing. Nanofluidic memristive devices could thus potentially be used to construct electrolytic computers that mimic th ...

Nature Portfolio2024

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

AstriFlash: A Flash-Based System for Online Services

Lei Yan, Babak Falsafi, Siddharth Gupta, Mark Johnathon Sutherland, Yunho Oh, Lei Yan

Modern datacenters host datasets in DRAM to offer large-scale online services with tight tail-latency requirements. Unfortunately, as DRAM is expensive and increasingly difficult to scale, datacenter operators are forced to consider denser storage technolo ...

2023

High Input Impedance Front-End Amplifier for Noncontact Bio-Potential Recording

Alexandre Schmid

In this paper, a high input impedance front-end amplifier is proposed for non-contact bio-potential recording systems. The proposed structure uses a positive feedback network to deliver a neutralization current back to the input node of the circuit to neut ...

Institute of Electrical and Electronics Engineers Inc.2023

Shrinking FPGA Static Power via Machine Learning-Based Power Gating and Enhanced Routing

Mirjana Stojilovic

Despite FPGAs rapidly evolving to support the requirements of the most demanding emerging applications, their high static power consumption, concentrated within the routing resources, still presents a major hurdle for low-power applications. Augmenting the ...

2021

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Memory chip or memory array for wide-voltage range in-memory computing using bitline technology

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, William Andrew Simon

A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a p ...

2021

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Peng Gao, Tom Theodorus Antonius Lummen, Peng Gao, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

Exploration Methodology for BTI-Induced Failures on RRAM-Based Edge AI Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

IEEE2020

Accurate deep neural network inference using computational phase-change memory

Irem Boybat Kara, Abu Sebastian

In-memory computing using resistive memory devices is a promising non-von Neumann approach for making energy-efficient deep learning inference hardware. However, due to device variability and noise, the network needs to be trained in a specific way so that ...

Nature Research2020

Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Wr ...

IEEE2020

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

COCKTAIL: Multi-Core Co-Optimization Framework With Proactive Reliability Management

David Atienza Alonso, Marina Zapater Sancho, Ali Pahlevan, Darong Huang

High performance computing (HPC) servers aim to meet an increase in the number and complexity of tasks and, consequently, to address the energy efficiency challenge. In addition to energy efficiency, it is essential to manage lifetime limitations of power- ...

2022

VWR2A: A Very-Wide-Register Reconfigurable-Array Architecture for Low-Power Embedded Devices

David Atienza Alonso, Miguel Peon Quiros, Benoît Walter Denkinger

Edge-computing requires high-performance energy-efficient embedded systems. Fixed-function or custom accelerators, such as FFT or FIR filter engines, are very efficient at implementing a particular functionality for a given set of constraints. However, the ...

ASSOC COMPUTING MACHINERY2022

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020