Publications related to Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Related publications (44)

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Shelly Ben David, Anna Fontcuberta i Morral, Alok Rudra, Victor Carle Adrien Boureau, Santhanu Panikar Ramanandan

Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

WILEY-V C H VERLAG GMBH2025

Spatial quantum-interference landscapes of multi-site-controlled quantum dots coupled to extended photonic cavity modes

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

A compact platform to integrate emitters in a cavity-like support is to embed quantum dots (QDs) in a photonic crystal (PhC) structure, making them promising candidates for integrated quantum photonic circuits. The emission properties of QDs can be modifie ...

2025

Plasmonic biosensor enabled by resonant quantum tunnelling

Hatice Altug, Ivan Sinev, Mikhail Masharin

Metasurfaces provide an ideal platform for optical sensing because they produce strong light-field confinement and enhancement over extended regions that allow us to identify deep-subwavelength layers of organic and inorganic molecules. However, the requir ...

Nature Publishing Group2025

High-quality epitaxial BaTiO3 films grown by high-vacuum chemical vapor deposition for integrated electro-optical devices

Patrik Willi Hoffmann, Wojciech Bozydar Szmyt

Synthesizing high-quality epitaxial BaTiO3 (BTO) by means of high-vacuum chemical vapor deposition (HV-CVD) requires a precise control over precursor fluxes impinging onto the heated substrate surface so that the incorporation rates of all elements corresp ...

2025

Structural and magnetic properties of β-Li2IrO3 after grazing-angle focused ion beam thinning

Christian Rüegg

Manipulating the size and orientation of quantum materials is often used to tune emergent phenomena, but precise control of these parameters is also necessary from an experimental point of view. Various synthesis techniques already exist, such as epitaxial ...

2025

A dephasing sweet spot with enhanced dipolar coupling

Pasquale Scarlino

Two-level systems (TLSs) are the basic units of quantum computers but face a trade-off between operation speed and coherence due to shared coupling paths. Here, we investigate a TLS given by a singlet-triplet (ST+) transition. We identify a magnetic-field ...

2025

All-perovskite tandem solar cells achieving >29% efficiency with improved (100) orientation in wide-bandgap perovskites

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ursula Röthlisberger, Virginia Carnevali, Nikolaos Lempesis, Mingyang Wei, Vladislav Slama, Lorenzo Agosta

Monolithic all-perovskite tandem solar cells present a promising approach for exceeding the efficiency limit of single-junction solar cells. However, the substantial open-circuit voltage loss in the wide-bandgap perovskite subcell hinders further improveme ...

NATURE PORTFOLIO2025

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Pasquale Scarlino, Fabian Oppliger, Franco De Palma

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

2024

Long live(d) CsPbBr3 superlattices: colloidal atomic layer deposition for structural stability

Raffaella Buonsanti, Philippe Benjamin Green, Alexander Nicolas Chen

Superlattice formation afforded by metal halide perovskite nanocrystals has been a phenomenon of interest due to the high structural order induced in these self-assemblies, an order that is influenced by the surface chemistry and particle morphology of the ...

Royal Soc Chemistry2024

Hybrid organic/metal-oxide shells on semiconductor nanocrystals via colloidal atomic layer deposition

Ona Segura Lecina

The escalating energy demand and the imperative necessity to reduce the carbon footprint require transformative approaches to energy conversion. Materials chemistry plays a pivotal role in addressing these global challenges by developing novel materials fo ...

EPFL2024

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Fateme Kiani Shahvandi

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Controlling photothermoelectric directional photocurrents in graphene with over 400 GHz bandwidth

Yesim Koyaz

Photodetection in the near- and mid-infrared spectrum requires a suitable absorbing material able to meet the respective targets while ideally being cost-effective. Graphene, with its extraordinary optoelectronic properties, could provide a material basis ...

NATURE PORTFOLIO2024

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

Integrated chirped photonic-crystal cavities in gallium phosphide for broadband soliton generation

Tobias Kippenberg, Johann Emmeram Riemensberger, Miles Henry Anderson, Nikolai Kuznetsov, Alisa Davydova

Chirped mirrors have underpinned advances in ultra-fast lasers based on bulk optics but have yet to be fully exploited in integrated photonics, where they could provide a means to engineer otherwise unattainable dispersion profiles for a range of nonlinear ...

2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Full Solution Process of a Near-Infrared Light-Emitting Electrochemical Cell Based on Novel Emissive Ruthenium Complexes of 1,10-Phenanthroline-Derived Ligands and a Eutectic Alloy as the Top Electrode

Mohammad Khaja Nazeeruddin

Near-infrared luminescent materials have recently received considerable attention for a large number of applications, including in solid-state lighting, as bioimaging agents, as photovoltaic cells, and in the telecommunication industry. By adding diverse e ...

AMER CHEMICAL SOC2023

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024