CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

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Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

All-solid-state time-resolved cameras based on CMOS single-photon avalanche diode (SPAD) arrays have made very significant advances since the fabrication of the first CMOS SPADs back in 2003. These natively digital sensors are now available in large format ...

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostru ...

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

Designing SPADs with high sensitivity in a wide wavelength range is crucial since the applications utilizing SPAD-based sensors target different parts of the spectrum. Here, we introduce a novel technique to achieve a wider sensitivity spectrum through the ...

The rising atmospheric level of carbon dioxide, CO2, contributes to climate change and poses urgent need to find scalable solutions both to decrease its emissions and to be able to recycle it, if the goals of Paris Agreement to limit the temperature rise a ...

This paper addresses the 3D nature of traditional Electronically Steerable Parasitic Array Radiators (ESPARs). Additionally, the required distance between the main radiator and the parasitic elements usually affects the antenna's electrical size and the fr ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

Compressive Raman imaging has emerged as a promising technique to speed up chemical imaging by compressing the data during acquisition. Yet, current scanning imaging speed is fundamentally limited by the sensors pixel dwell times of at best 1µs. Here, we i ...

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compa ...

Fast and uniform ion transport within the solid electrolyte interphase (SEI) is considered a crucial factor for ensuring the long-term stability of metal electrodes. In this study, we present the fabrication of ultrathin artificial interphases consisting o ...

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

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Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

A review of recent developments on CMOS single-photon avalanche diode-based cameras for biomedical time-resolved applications

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

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Low-Profile ESPAR Using Metamaterial-Inspired Structure

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Towards video-rate compressive spontaneous Raman imaging using single-photon avalanche diode arrays

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

GeSn as next-generation material for short-wave infrared single-photon detection

Development and characterization of N2O-plasma oxide layers for high-temperature p-type passivating contacts in silicon solar cells

Pure Amorphous and Ultrathin Phosphate Layer with Superior Ionic Conduction for Zinc Anode Protection

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Scalable Approaches to III-V Nanowires for Photodetection