SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

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We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

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SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

Chat with Graph Search

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

Optimizing Data Processing for Nanodiamond Based Relaxometry

A review of recent developments on CMOS single-photon avalanche diode-based cameras for biomedical time-resolved applications

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Live-cell imaging powered by computation

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Silicon nitride electric-field poled microresonator modulator

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Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics