Publications related to High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Related publications (30)

Low-Profile ESPAR Using Metamaterial-Inspired Structure

Romain Christophe Rémy Fleury, Amir Jafargholi

This paper addresses the 3D nature of traditional Electronically Steerable Parasitic Array Radiators (ESPARs). Additionally, the required distance between the main radiator and the parasitic elements usually affects the antenna's electrical size and the fr ...

2024

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Variable-height microfluidic channels for accurate immobilization of C. elegans worms by using a single dry etching step

Martinus Adela Maria Gijs, Hüseyin Baris Atakan, Rongrong Xiang

We present an aspect ratio dependent etching (ARDE) method, utilizing the Bosch dry etching process of silicon, to create the optimal silicon master microstructures for replication of polydimethylsiloxane (PDMS) microchannels that allow immobilizing C. ele ...

2018

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...

EPFL2018

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

High-aspect ratio nanopatterning via combined thermal scanning probe lithography and dry etching

Jürgen Brugger, Yuliya Lisunova

Thermal scanning probe lithography is an emerging nanofabrication technique for rapid prototyping of arbitrary topographies in thermally sensitive resist. This feature, paired to the recent advances in dry plasma etching techniques, allows the fabrication ...

Elsevier2017

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Release area confinement in Contour Mode Resonators

Luis Guillermo Villanueva Torrijo, Annalisa De Pastina, Andrea Lozzi

In this paper we propose a modified fabrication process to finely define the region surrounding the resonator that undergoes Si etching in CMRs. The unpredictable undercut has been shown to lead to Q instability within microns' variation. High aspect ratio ...

Ieee2017

Superplastic behavior of silica nanowires obtained by direct patterning of silsesquioxane-based precursors

Yusuf Leblebici

Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are ac ...

Institute of Physics2017

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extrem ...

Institute of Physics2016

Demonstrating and Unraveling a Controlled Nanometer-Scale Expansion of the Vacancy Defects in Graphene by CO2

Kumar Varoon Agrawal, Luis Francisco Villalobos Vazquez de la Parra, Kuang-Jung Hsu, Mojtaba Chevalier

A controlled manipulation of graphene edges and vacancies is desired for molecular separation, sensing and electronics applications. Unfortunately, available etching methods always lead to vacancy nucleation making it challenging to control etching. Herein ...

Wiley-VCH Verlag GmbH2022

Microfluidic Scintillation Detectors for High Energy Physics

Pietro Maoddi

This thesis deals with the development and study of microfluidic scintillation detectors, a technology of recent introduction for the detection of high energy particles. Most of the interest for such devices comes from the use of a liquid scintillator, whi ...

EPFL2015

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

On the Response Speed of Narrowband Organic Optical Upconversion Devices

Frank Nüesch, Surendra Babu Anantharaman, Matthias Diethelm, Wei-Hsu Hu

Organic upconversion devices (OUCs) consist of an organic infrared photodetector and an organic visible light-emitting diode (OLED), connected in series. OUCs convert photons from the infrared to the visible and are of use in applications such as process c ...

WILEY-V C H VERLAG GMBH2022

Post-cmos processing and 3d integration based on dry-film lithography

Yusuf Leblebici, Carlotta Guiducci, Yüksel Temiz

A method for performing a post processing pattern on a diced chip having a foot-print, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the di ...

2015

In-plane fabrication of insulated gold-tip probes for electrochemical and force spectroscopy molecular experiments

Nico de Rooij, Terunobu Akiyama, Peter Van der Wal, Sebastian Gautsch, Yexian Wu

A new and versatile fabrication process of insulated gold tip probes for atomic force microscopy (AFM) is presented by Wu et al. (In-plane fabricated insulated gold-tip probe for electrochemical and molecular experiments, in: 2013 IEEE 26th International C ...

Elsevier2014

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

EPFL2022

In-Plane Fabricated Insulated Gold-Tip Probe For Electrochemical And Molecular Experiments

Nico de Rooij, Terunobu Akiyama, Peter Van der Wal, Sebastian Gautsch, Yexian Wu

In this contribution we present a scanning probe with a gold-tip completely encapsulated with insulator all the way to the apex. The probe fabrication is unique owing to an in-plane arrangement in which the width of the cantilever is defined by deep reacti ...

IEEE2013