High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

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Metal-coated silicon micropillars for freestanding 3D-electrode arrays in microchannels

Carlotta Guiducci, Samuel Kilchenmann, Elena Bianchi, Enrica Rollo

This paper presents a fabrication process for arrays of high-aspect-ratio micropillar electrodes, which are freestanding 3D structures that feature metal sidewalls connected to passivated planar wires. Facing vertical electrodes are considered to be a key ...

Elsevier2013

Optimizing Parylene C Adhesion for MEMS Processes: Potassium Hydroxide Wet Etching

Philippe Renaud, Olha Sereda

Parylenes are used for a wide range of applications in microelectromechanical systems (MEMS) devices. However, their poor adhesion in a harsh liquid environment can limit the fabrication processes of complex MEMS and bioMEMS devices. Potassium hydroxide (K ...

Institute of Electrical and Electronics Engineers2013

Systematic design of millisecond gasification reactor for the incorporation of gas-sieving nanopores in single-layer graphene

Kumar Varoon Agrawal, Luis Francisco Villalobos Vazquez de la Parra, Shiqi Huang, Shaoxian Li, Kuang-Jung Hsu

Etching an ensemble of vacancy defects (nanopores) in single-layer graphene (SLG) to obtain a high density of nanopores with an effective size that enables high-performance gas sieving is challenging. This is because nanopore nucleation and expansion are u ...

2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Memristive-Biosensors: A New Detection Method by Using Nanofabricated Memristors

Giovanni De Micheli, Yusuf Leblebici, Sandro Carrara, Davide Sacchetto, Camilla Baj-Rossi

This paper proposes a new detection methodology based on memristive-effect registered on silicon nanowire. The nano-wires are fabricated by a lithographic technique that allows precise and selective etching at the nanoscale. The wires are obtained in three ...

Elsevier2012

Phenyl-bridged polysilsesquioxane positive and negative resist for electron beam lithography

Jürgen Brugger, Vaida Auzelyte

We present and characterize an organic–inorganic hybrid sol–gel material, phenyl-bridged polysilsesquioxane (ph-PSQ), for use as a new highresolution resist for electron beam lithography (EBL). The resist has a unique characteristic as the only positive to ...

Institute of Physics2012

The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

Benoît Bruno Pasquier, Edoardo Charbon, Sandro Carrara, Simone Frasca, Rebecca Camilla Leghziel

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturin ...

Nature Research2021

SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithography

Jürgen Brugger, Andreea Veronica Savu, Oscar Vazquez Mena

In this work, nanosphere lithography was integrated with standard microfabrication for the wafer-scale fabrication of silicon nitride (SiN) membranes with arrays of submicrometer holes. A monolayer of polystyrene (PS) beads with a mean diameter of 428 or 5 ...

2011

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020