Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
In this paper we propose a modified fabrication process to finely define the region surrounding the resonator that undergoes Si etching in CMRs. The unpredictable undercut has been shown to lead to Q instability within microns' variation. High aspect ratio SiO2 trenches were used as barrier to confine the release area. Thanks to the high selectivity of SF6 over SiO2, long Si etch steps can be performed without changing the release area. Our results show an excellent Q stability over etching time (