Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

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Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

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Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

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