Publication

Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

Romuald Houdré, Ursula Oesterle, Marc Ilegems, Andrea Fiore
2000
Conference Papers

Abstract

We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.

Official source

https://infoscience.epfl.ch/entities/publication/1c144ceb-03f8-4ae9-94de-66feb26dad5e

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Romuald Houdré, Ursula Oesterle, Marc Ilegems, Andrea Fiore
2000
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/1c144ceb-03f8-4ae9-94de-66feb26dad5e

About this result

Related concepts (31)

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

Vertical-cavity surface-emitting laser

The vertical-cavity surface-emitting laser, or VCSEL ˈvɪksəl, is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also in-plane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer. VCSELs are used in various laser products, including computer mice, fiber optic communications, laser printers, Face ID, and smartglasses.

Indium gallium arsenide

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

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Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

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