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Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Nava Setter, Igor Stolichnov, Enrico Colla
2006
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Nava Setter, Igor Stolichnov, Enrico Colla
2006
Journal Articles

Official source

Related publications (10)

https://infoscience.epfl.ch/entities/publication/1c03f20a-5d06-4f52-80ed-c2d2040b686f

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Related publications (10)

Software Support for Non-Volatile Memory (NVM) Programming

David Teksen Aksun

Non-Volatile Memory (NVM) is an emerging type of memory device that provides fast, byte-addressable, and high-capacity durable storage. NVM sits on the memory bus and allows durable data structures designs similar to the in-memory equivalent ones. Expensiv ...

EPFL2021

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018