Publications related to Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Related publications (10)

Software Support for Non-Volatile Memory (NVM) Programming

Non-Volatile Memory (NVM) is an emerging type of memory device that provides fast, byte-addressable, and high-capacity durable storage. NVM sits on the memory bus and allows durable data structures designs similar to the in-memory equivalent ones. Expensiv ...

EPFL2021

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

Object-Oriented Recovery for Non-volatile Memory

James Richard Larus, Nachshon Cohen, David Teksen Aksun

New non-volatile memory (NVM) technologies enable direct, durable storage of data in an application's heap. Durable, randomly accessible memory facilitates the construction of applications that do not lose data at system shutdown or power failure. Existing ...

ACM2018

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Yusuf Leblebici, Alexandre Schmid, Davide Garetto

Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the effects ...

2011

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Ferroelectric Gate on AlGaN/GaN Heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

IEEE2007

Deep-submicron embedded processor architectures for high-performance, low-cost and low-power

Sylvain Aguirre

Because the market has an insatiable appetite for new functionality, performance is becoming an increasingly important factor. The telecommunication and network domains are especially touched by this phenomenon but they are not the only ones. For instance, ...

EPFL2007