Publication

1.3µm optically-pumped disc laser by wafer fusion

Elyahou Kapon, Alexei Sirbu
2009
Journal Articles

Abstract

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 mu m. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures. (C) 2009 Optical Society of America

Official source

https://infoscience.epfl.ch/entities/publication/187b103b-4e1a-45f3-92ec-91513c788ca6

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Elyahou Kapon, Alexei Sirbu
2009
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/187b103b-4e1a-45f3-92ec-91513c788ca6

About this result

Related concepts (19)

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A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

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1.3µm optically-pumped disc laser by wafer fusion

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