Publications by Vladimir Pashchenko

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Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...

It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN ...

Acoustic delay lines based on Al0.85Sc0.15N thin film hybrid transducers were investigated by finite element modeling. It was found that an acoustic impedance matching between transducer and non-piezoelectric substrate material plays a crucial role to effi ...

In this work, bar- and disk-shaped resonators were fabricated using Al(0.8)4Sc(0.16)N thin film Sensitivity analysis of the resonators' resonance frequencies with respect to the piezoelectric material parameters revealed that resonance analysis can be used ...

A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire subst ...

Sputter deposited Al(1-x)ScxN thin films with a Sc content from x = 0 to 43 at% are investigated by electron microscopy in order to study and explain the formation and growth of abnormally oriented grains (AOG). It is found that the latter did not nucleate ...

Lamb wave microresonators with wavelengths ...

Dual mode bulk acoustic wave resonators were fabricated using tilted c-axis oriented grains. In this case, longitudinal and shear modes are excited at the same time. The stiffness matrix for the tilted geometry was derived, and served to determine c(33) an ...

Aluminium scandium nitride (ASN) exhibits a largely enhanced piezoelectric response as compared to aluminium nitride (AlN), which makes it an upcoming piezoelectric material for use in next generation RF filters, sensors, actuators and energy harvesting de ...

Vladimir Pashchenko

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Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling

Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates

Effective SAW excitation on non-piezoelectric substrate using AlScN piezoelectric thin film BAW/SAW hybrid transducer

Determination of elastic and piezoelectric properties of Al0.84Sc0.16N thin films

Hybrid BAW/SAW AlN and AlScN Thin Film Resonator First Experimental data

Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces

Free standing and solidly mounted Lamb wave resonators based on Al0.85Sc0.15N thin film

Material Constants Extraction For Alscn Thin Films Using A Dual Mode Baw Resonator

Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: influence of intrinsic stress and sputtering parameters