Publications by Jury Sandrini | EPFL Graph Search

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteristics, ...

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized ...

This work presents the co-integration of resistive random access memory crossbars within a 180nm Read-Write CMOS chip. TaOx-based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of ...

In this paper, we present a heterogeneous integration of ReRAMs with standard CMOS technology by post-processing the Back-End-of-the-Line (BEOL) of fully finished CMOS chips. ...

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ operati ...

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwich ...

Jury Sandrini

Chat with Graph Search

Fabrication, Characterization and Integration of Resistive Random Access Memories

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Heterogeneous integration of ReRAM crossbars in a CMOS foundry chip

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices