Publication

P-type InGaN across the entire alloy composition range

Esther Alarcón Lladó
2013
Journal Articles

Abstract

A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into InxGa1-xN (0.1

Official source

https://infoscience.epfl.ch/entities/publication/4ddcf661-55ff-46e2-a65c-a4e548e524d8

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

P-type InGaN across the entire alloy composition range

Chat with Graph Search

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices