Gözde Tütüncüoglu

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Related publications (50)

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Yannik Fontana, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Léo Duchêne, Sonia Conesa Boj, Federico Matteini, Luca Francaviglia

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

American Institute of Physics2015

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Yannik Fontana, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Vladimir Dubrovskii

Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter a ...

Institute of Physics2015

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Federico Matteini, Francesca Amaduzzi

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

American Institute of Physics2014

III-V nanowire arrays: growth and light interaction

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Federico Matteini

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

Institute of Physics2014

Anisotropic magnetoresistance of individual CoFeB and Ni nanotubes with values of up to 1.4% at room temperature

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Eleonora Russo, Dirk Grundler, Federico Matteini, Reza Zamani

Magnetic nanotubes (NTs) are interesting for magnetic memory and magnonic applications. We report magnetotransport experiments on individual 10 to 20 mu m long Ni and CoFeB NTs with outer diameters ranging from 160 to 390 nm and film thicknesses of 20 to 4 ...

Amer Inst Physics2014

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Anna Fontcuberta i Morral, Martin Heiss, Gözde Tütüncüoglu, Eleonora Russo, Alberto Casadei, Federico Matteini

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

American Chemical Society2014

Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Esther Alarcon Llado, Eleonora Russo, Federico Matteini

The growth of compound semiconductor nanowires on the silicon platform has opened many new perspectives in the area of electronics, optoelectronics and photovoltaics. We have grown a 1 x 1 mm(2) array of InAs nanowires on p-type silicon for the fabrication ...

Institute of Physics2014

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the n ...

American Institute of Physics2014

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Ignasi Canales Mundet

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Institute of Physics2013

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