Anna Fontcuberta i Morral

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We present the method for growing GaAs nanowires by MBE without using gold as a catalyst. With careful choice of the growth parameters nanowires with length of several microns and diameters in the range of 20 nm up to 120 nm are obtained. By changing the g ...

This report explores the use of sacrificial thin polymer films prepared by surface-initiated polymerization as a template for the fabrication of highly conformal metal nanoparticle solar cell electrodes. As a first proof-of-principle, the use of this metho ...

A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...

Series resistance in solar cells limit their maximum conversion efficiency and thus should be minimized. Generally, such losses originate from deficiencies at the contact or absorber level. Quantifying them is the first step for tackling its reduction. In ...

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was not possible before with thin film technology. In turn, this opens new avenues for applications in the areas of energy harvesting, electronics, and optoele ...

Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...

Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substitute less abundant, highly functional compound semiconductors such as InAs or InP. Compound semiconductors in the form of nanowires could revolutionise appl ...

We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-ble ...

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on thei ...

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the n ...

A thermal diode, which, by analogy to its electrical counterpart, rectifies heat current, is the building block for thermal circuits. To realize a thermal diode, we demonstrate thermal rectification in a GaAs telescopic nanowire system using the thermal br ...

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

Using an optimally coupled nanometer-scale SQUID, we measure the magnetic flux originating from an individual ferromagnetic Ni nanotube attached to a Si cantilever. At the same time, we detect the nanotube's volume magnetization using torque magnetometry. ...

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N conte ...

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queiss ...

Nanoscale membranes have emerged as a new class of vertical nanostructures that enable the integration of horizontal networks of III-V nanowires on a chip. To generalize this method to the whole family of III-Vs, progress in the understanding of the membra ...

Anna Fontcuberta i Morral

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Nanowires for solar cell applications

Polymer Brush Guided Formation of Conformal, Plasmonic Nanoparticle-Based Electrodes for Microwire Solar Cells

Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays

Extraction of p-n junction properties and series resistance in GaAs nanowire-based solar cells using light concentration

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Plastic and Elastic Strain Fields in GaAs/Si Core-Shell Nanowires

Gallium arsenide p-i-n radial structures for photovoltaic applications

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Modulation of Fluorescence Signals from Biomolecules along Nanowires Due to Interaction of Light with Oriented Nanostructures

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Thermal Rectification in Telescopic Nanowires: Impact of Thermal Boundary Resistance

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Reversal Mechanism of an Individual Ni Nanotube Simultaneously Studied by Torque and SQUID Magnetometry

Dataset for "Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence"

Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires

Single-nanowire solar cells beyond the Shockley-Queisser limit

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment