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Anna Fontcuberta i Morral

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Related publications (286)

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Royal Society of Chemistry2017

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Amer Chemical Soc2017

Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

Anna Fontcuberta i Morral, Esther Alarcon Llado, Federico Matteini, Heidi Andrea Potts

Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental me ...

IEEE2016

Field-effect passivation on silicon nanowire solar cells (vol 8, pg 673, 2015)

Bénédicte Demaurex, Anna Fontcuberta i Morral, Stefaan De Wolf, Anna Dalmau Mallorquí, Amirreza Kiani

Surface recombination represents a handicap for high-efficiency solar cells. Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is grea ...

Tsinghua Univ Press2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Federico Matteini, Frank Meyer, Ruben Ricca, Jelena Vukajlovic Plestina, Heidi Andrea Potts, Vladimir Dubrovskii

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Optical properties of GaAsSb nanowire networks and GaAs nanomembranes

Alessandro Surrente, Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Martin George Friedl, Heidi Andrea Potts

Ieee2016

Time-Resolved Nonlinear Coupling between Orthogonal Flexural Modes of a Pristine GaAs Nanowire

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini

We demonstrate nonlinear coupling between two orthogonal flexural modes of single as-grown GaAs nanowires. The resonant frequency of one mode can be shifted over many line widths by mechanically driving the other mode. We present time-domain measurements o ...

American Chemical Society2016

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Hubert Hautmann

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

Magnetization reversal in individual Py and CoFeB nanotubes locally probed via anisotropic magnetoresistance and anomalous Nernst effect

Anna Fontcuberta i Morral, Dirk Grundler

Using anisotropic magnetoresistance in a multi-probe configuration and local heating with a scanning laser, we investigate the magnetization reversal of individual permalloy (Py) and CoFeB nanotubes with spatial resolution. Nanocrystalline Py and amorphous ...

AIP American Institute of Physics2016

Nanowire-Aperture Probe: Local Enhanced Fluorescence Detection for the Investigation of Live Cells at the Nanoscale

Anna Fontcuberta i Morral, Esther Alarcon Llado

Fluorescence microscopy has tackled many of the burning questions in cellular biology. Probing low-affinity cellular interactions remains one of the major challenges in the field to better understand cellular signaling. We introduce a novel approach the na ...

Amer Chemical Soc2016

MATERIALS SCIENCE How crystals get an edge

Anna Fontcuberta i Morral

Nature Publishing Group2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures

Anna Fontcuberta i Morral, Luca Francaviglia

We demonstrate the selective area growth of GaN-(Al,Ga)N core shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. ...

American Chemical Society2016

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Anna Fontcuberta i Morral, Esther Alarcon Llado, Francesca Amaduzzi

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Institute of Physics2016

Dynamic cantilever magnetometry of individual CoFeB nanotubes

Anna Fontcuberta i Morral, Dirk Grundler

We investigate single CoFeB nanotubes with hexagonal cross section using dynamic cantilever magnetometry (DCM). We develop both an analytical model based on the Stoner-Wohlfarth approximation and a broadly applicable numerical framework for analyzing DCM m ...

2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts, William Craig Carter, Dmitry Mikulik

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Alberto Casadei, Federico Matteini, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Quantum Heterostructures Based on GaAs Nanomembranes for Photonic Applications

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Jean-Baptiste Leran, Federico Matteini, Martin George Friedl, Heidi Andrea Potts

Ieee2016

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