Anna Fontcuberta i Morral

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Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...

Raw data associated to the manuscript “Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties", CrystEngComm 2021, XXXX, XXX, XXX-XXX There is currently an emerging drive to computational materials design ...

Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable envi ...

Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth w ...

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy ...

Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, ...

We report highly sensitive de Haas-van Alphen (dHvA) effect measurements on a high-mobility two-dimensional electron system in an AlAs quantum well. Here two valleys are occupied forming a pseudospin system. At 400 mK, the dHvA effect shows pronounced osci ...

Two-dimensional (2D) Ruddlesden–Popper perovskites have emerged as a new class of hybrid materials with high photoluminescence and improved stability compared to their three-dimensional (3D) counterparts. Studies of the photophysics of these new 2D perovsk ...

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...

Cleaved-edge overgrowth (CEO) is a promising technique to obtain ordered arrays of quantum dots, where the size and position of the dots can be controlled very well. We present level set simulations for CEO. Our simulations illustrate how the quality of th ...

We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed pho ...

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

A phase-stable superposition of femtosecond pulses and their second harmonic induces ultrashort microampere current bursts in single unbiased GaAs nanowires. Current injection relies on quantum interference of one-and two-photon absorption pathways. © 2010 ...

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Anna Fontcuberta i Morral

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P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

Dataset for "Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties"

The 2022 applied physics by pioneering women: a roadmap

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

De Haas-van Alphen effect and energy gaps of a correlated two-dimensional electron system in an AlAs two-valley pseudospin system

Photophysics behind highly luminescent two-dimensional hybrid perovskite (CH3(CH2)2NH3)2(CH3NH3)2Pb3Br10 thin films

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Template-Assisted Scalable Nanowire Networks

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

A level set simulation for ordering of quantum dots via cleaved-edge overgrowth

Photocurrent and photoconductance properties of a GaAs nanowire

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

All-optical coherent control of electrical currents in single GaAs nanowires

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si