Davide Sacchetto

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Related publications (52)

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Top-down fabrication of very-high density vertically stacked silicon nanowire arrays with low temperature budget

Giovanni De Micheli, Yusuf Leblebici, Davide Sacchetto, Michail Zervas

We report on a top-down complementary metal oxide semiconductor (CMOS) compatible fabrication method of ultra-high density Si nanowire (SiNW) arrays using a time multiplexed alternating process (TMAP) with low temperature budget. The flexibility of the fab ...

Elsevier2011

Towards Structured ASICs Using Polarity-Tunable SiNW Transistors, invited

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Davide Sacchetto, Shashi Kanth Bobba, Michele De Marchi

In addition to scaling semiconductor devices down to their physical limit, novel devices show enhanced functionality compared to conventional CMOS. At advanced technology nodes, many devices exhibit ambipolar behavior, i.e., they show n- and p-type charact ...

2013

Resistive Switching Element and Use Thereof

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Shashi Kanth Bobba, Tugba Demirci

A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at ...

2016

GMS: Generic Memristive Structure for Non-Volatile FPGAs

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Shashi Kanth Bobba

The invention of the memristor enables new possibilities for computation and non-volatile memory storage. In this paper we propose a Generic Memristive Structure (GMS) for 3-D FPGA applications. The GMS cell is demonstrated to be utilized for steering logi ...

2012

Vertically-Stacked Si Nanowire FETs with sub-micrometer Gate-All-Around polysilicon gates patterned by nanostencil lithography

Giovanni De Micheli, Yusuf Leblebici, Jürgen Brugger, Andreea Veronica Savu, Davide Sacchetto, Michail Zervas, Shenqi Xie

2011

Graphene Field Effect Devices Operating in Differential Configuration

Yusuf Leblebici, Davide Sacchetto, Clemens Benedict Nyffeler

After decades of miniaturization and performance tuning, Silicon electronics is approaching its technological limits. In the search for alternative transistor channel materials, Graphene has been given much attention since its discovery in 2004, mainly bec ...

2014

Integrated Photonic Interposers for Processing Octave-Spanning Microresonator Frequency Combs

Davide Sacchetto, Michail Zervas, Michael Wolfgang Geiselmann

We demonstrate multiple silicon-nitride nanophotonic elements for on-chip processing of octave-spanning microresonator frequency combs. Dichroic filters, multimode interferometers, and tunable add-drop microring filters are shown along with soliton microco ...

IEEE2020

New Insight on Bio-sensing by Nano-fabricated Memristors

Giovanni De Micheli, Yusuf Leblebici, Sandro Carrara, Davide Sacchetto

We report here on a new insight for bio-sensing based on the memristive effect of functionalized Schottky-barrier memristive silicon nanowire in dry environment. The device concept is discussed. Electrical measurements confirm the bio-detection by the narr ...

2011

Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology

Yusuf Leblebici, Davide Sacchetto, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ operati ...

2015

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Jury Sandrini

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwich ...

Electrochemical Society2017

Fabrication and Characterization of Vertically Stacked Gate-All-Around Si Nanowire FET Arrays

Giovanni De Micheli, Yusuf Leblebici, Davide Sacchetto, Mohamed Haykel Ben Jamaa

We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFETs) in Gate-All Around (GAA) configuration. Stacks with the number of channels ranging from 1 to 12 have been successfully produced by means of a micrometer ...

2009

Monolithic fabrication of silicon nanowires bridging thick silicon structures

Yusuf Leblebici, Georg Fantner, Davide Sacchetto, Oliver Peric, Zuhal Tasdemir

2015