Publication

Fabrication and Characterization of Vertically Stacked Gate-All-Around Si Nanowire FET Arrays

Yusuf Leblebici, Davide Sacchetto, Mohamed Haykel Ben Jamaa
2009
Conference Papers

Abstract

We describe the fabrication of vertically stacked Silicon Nanowire Field Effect Transistors (SiNWFETs) in Gate-All Around (GAA) configuration. Stacks with the number of channels ranging from 1 to 12 have been successfully produced by means of a micrometer scale lithography and conventional fabrication techniques. It is shown that demonstrator Schottky Barrier (SB) devices fabricated with Cr/NiCr contacts present good subthreshold slope (70mV/dec), ION/IOFF ratio $>= 10^4$ and reproducible ambipolar behavior.

Official source

https://infoscience.epfl.ch/entities/publication/8ac2235f-76ed-4544-876a-74ee04e986bd

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Yusuf Leblebici, Davide Sacchetto, Mohamed Haykel Ben Jamaa
2009
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/8ac2235f-76ed-4544-876a-74ee04e986bd

About this result

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