Publications by Antonino Francesco Castiglia

Related publications (27)

Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

Secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements were combined to thoroughly study Mg doping in GaN layers grown by metal organic vapor phase epitaxy. First we found that the Mg steady-state incorporation regime occurs for a surf ...

AIP American Institute of Physics2011

Broadband blue superluminescent light-emitting diodes based on GaN

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

AIP American Institute of Physics2010

GaN-based superluminescent diodes with long lifetime

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their r ...

Spie-Int Soc Optical Engineering2016

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Julien Dorsaz, Antonino Francesco Castiglia

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

2007

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Gatien Cosendey, Alexei Altoukhov

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AIP American Institute of Physics2010

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...

EDP Sciences2008

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Nicolas Grandjean, Jean-François Carlin, Pierre Stadelmann, Raphaël Butté, Antonino Francesco Castiglia, Eric Feltin, Anas Mouti, Gabriel Christmann

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Rossetti, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Romuald Houdré, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Antonino Francesco Castiglia, Kirill Atlasov, Jacques Levrat, Georg Rossbach, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

American Institute of Physics2012

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Gatien Cosendey, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Sylvain Nicolay, Marcel Py, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Nicolas Grandjean, Denis Martin, Antonino Francesco Castiglia, Marco Malinverni

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Jacques Levrat, Alexei Altoukhov

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010