Publication

3-D integrable optoelectronic devices for telecommunications ICs

Mihai Adrian Ionescu, Luc Thévenaz, Philippe Renaud, Michel Declercq, Cyrille Hibert, Paolo Giuseppe Dainesi, Philippe Flückiger, Georges-André Racine
2002
Conference Papers

Abstract

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integrated circuits. A 5 MHz bandwidth for 2×2 switch and a thermal compensation principle for modulators is demonstrated.

Official source

https://infoscience.epfl.ch/entities/publication/28274a00-ec89-4cd3-80ce-73f83324f74b

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3-D integrable optoelectronic devices for telecommunications ICs

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