Didier Bouvet, Serge Ecoffey, Vincent Pott, Mihai Adrian Ionescu, Santanu Mahapatra
This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...
2005
