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Vincent Pott

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Publications associées (28)

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Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Mihai Adrian Ionescu, Didier Bouvet, Montserrat Fernandez-Bolanos Badia, Vincent Pott, Georges-André Racine, Nicolas Abelé

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...

Elsevier2006

Local volume inversion and corner effects in triangular gate-all-around MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

2006

Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements

Mihai Adrian Ionescu, Yusuf Leblebici, Michel Declercq, Didier Bouvet, Vincent Pott, Serge Ecoffey

2005

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

Mihai Adrian Ionescu, Vincent Pott

2006

Comparison of RSG-MOSFET and capacitive MEMS resonator detection

Mihai Adrian Ionescu, Vincent Pott, Nicolas Abelé, Katherine Boucart

2005

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

Mihai Adrian Ionescu, Vincent Pott

2005

Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor

Mihai Adrian Ionescu, Didier Bouvet, Montserrat Fernandez-Bolanos Badia, Vincent Pott, Georges-André Racine, Nicolas Abelé

2005

Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection

Mihai Adrian Ionescu, Vincent Pott, Nicolas Abelé, Katherine Boucart

2005