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Vincent Pott

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Related publications (28)

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Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

Vincent Pott

Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...

EPFL2007

The high-mobility bended n-channel silicon nanowire transistor

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Mihai Adrian Ionescu, Maher Kayal, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Cédric Meinen

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Mihai Adrian Ionescu, Maher Kayal, Kirsten Emilie Moselund, Vincent Pott

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...

2009

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Vincent Pott

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Mihai Adrian Ionescu, Romuald Houdré, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Nicolas Le Thomas

2006

Low temperature investigation of electrical conduction in polysilicon: simulation and experiment

Mihai Adrian Ionescu, Didier Bouvet, Vincent Pott, Santanu Mahapatra, Serge Ecoffey

2005

Nanowire for Room Temperature Operated Hybrid CMOS-‘NANO’ Integrated Circuits

Mihai Adrian Ionescu, Yusuf Leblebici, Alexandre Schmid, Michel Declercq, Vincent Pott, Marco Mazza, Serge Ecoffey

2005

New Logic Family Based on Hybrid MOSFET-Polysilicon Nano-Wires

Mihai Adrian Ionescu, Yusuf Leblebici, Alexandre Schmid, Michel Declercq, Didier Bouvet, Vincent Pott, Marco Mazza, Serge Ecoffey

2005

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

2006

Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

Mihai Adrian Ionescu, Didier Bouvet, Vincent Pott, Santanu Mahapatra, Serge Ecoffey

2006

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Mihai Adrian Ionescu, Maher Kayal, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Cédric Meinen

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

2008

Gate-all-around MOSFETs: true fabrication and characteristics

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

2006

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Mihai Adrian Ionescu, Didier Bouvet, Vincent Pott, Santanu Mahapatra, Serge Ecoffey

This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...

2005

Vincent Pott

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Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

The high-mobility bended n-channel silicon nanowire transistor

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Low temperature investigation of electrical conduction in polysilicon: simulation and experiment

Nanowire for Room Temperature Operated Hybrid CMOS-‘NANO’ Integrated Circuits

New Logic Family Based on Hybrid MOSFET-Polysilicon Nano-Wires

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Gate-all-around MOSFETs: true fabrication and characteristics

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Low temperature single electron characteristics in gate-all-around MOSFET

Silicon nanowires patterning by sidewall and nano-oxidation processing

RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures

Nanostencil-based lithography for silicon nanowires fabrication