Jean-Daniel Ganière

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Related publications (31)

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Jacques Levrat, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jelena Ristic, Pierre Michel Corfdir

A detailed study of excitons in unstrained GaN nanocolumns grown by plasma assisted molecular beam epitaxy on silicon substrates is presented. The time-integrated and time-resolved photoluminescence spectra do not depend significantly on the (111) or (001) ...

American Institute of Physics2009

Growth mode induced carrier localization in InGaN/GaN quantum wells

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Raphaël Butté, Eric Feltin

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

Modification of InGaN quantum well luminescence by microstructured buffer layers

Jean-François Carlin, Jean-Daniel Ganière, Nicolas Grandjean

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers. ...

AIP2007

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Andrea Crottini, Nicolas Grandjean, Eric Feltin

The authors have studied InxGa1-xN/GaN (x approximate to 15%) quantum wells (QWs) using atomic force microscopy (AFM) and picosecond time resolved cathodoluminescence (pTRCL) measurements. They observed a contrast inversion between monochromatic CL maps co ...

American Institute of Physics2006

Engineering the spatial confinement of exciton polaritons in semiconductors

Vincenzo Savona, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, François Morier-Genoud, Reda Idrissi Kaitouni, Taofiq Paraïso, Ounsi El Daïf, Pierre Lugan

We demonstrate three-dimensional spatial confinement of exciton-polaritons in a semiconductor microcavity. Polaritons are confined within a micron-sized region of slightly larger cavity thickness, called mesa, through lateral trapping of their photon compo ...

2006

Time-Resolved Cathodoluminescence of InGaAs/AlGaAs Tetrahedral Pyramidal Quantum structures

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Elyahou Kapon, Andrea Crottini, Samuel Sonderegger, Martin Henrik Baier

Springer-Verlag2006

Time-resolved spectroscopic measurement apparatus

Jean-Daniel Ganière

Light dispersing device comprising a slit element having a slit for exposure to electromagnetic radiation, wherein the slit element is configured and disposed for turning the slit between at least two positions. The light dispersing device is used together ...

2006

Probing carrier dynamics in nanostructures by picosecond cathodoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Elyahou Kapon, Andrea Crottini, Samuel Sonderegger, Martin Henrik Baier

2005

Spectrométrie de masse et spectroscopie optique de jets supersoniques d'agrégats alcalins

Jean-Daniel Ganière

EPFL1982

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