Jean-Daniel Ganière

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Related publications (29)

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Hopping process of bound excitons under an energy gradient

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

We report on the mechanism of hopping for bound excitons under an energy gradient. By means of a Monte-Carlo simulation, we show that this mechanism explains the movement of bound excitons observed experimentally. We show that the speed of the excitons dec ...

American Institute of Physics2014

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Raphaël Butté, Jean-Daniel Ganière, Gabriel Christmann, Jacques Levrat, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir

Spatio-time-resolvedcathodoluminescence (STRCL) spectroscopy isimplemented to assess the local carrier dynamics in a 70 nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In GaN epilayer grown on a freestanding GaN substrate by me ...

2011

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Jean-Daniel Ganière, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Pyramidal GaAs/AlzGa1-zAs quantum wire/dot systems with controlled heterostructure potential

Elyahou Kapon, Alok Rudra, Jean-Daniel Ganière, Qing Zhu

The structural and optical properties of controlled-heterostructure-potential, low-dimensional GaAs/AlGaAs nanostructures self-formed during organometallic chemical vapor deposition in tetrahedral pyramids etched in (111) B-GaAs substrates, are investigate ...

American Physical Society2010

Modification of InGaN quantum well luminescence by microstructured buffer layers

Nicolas Grandjean, Jean-François Carlin, Jean-Daniel Ganière

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers. ...

AIP2007

Biexcitonic molecules survive excitons at the Mott transition

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Raphaël Butté, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Jacques Levrat, Georg Rossbach, Mehran Shahmohammadi

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

Probing carrier dynamics in nanostructures by picosecond cathodoluminescence

Elyahou Kapon, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Martin Henrik Baier, Andrea Crottini, Samuel Sonderegger, Michele Merano

2005

Time-Resolved Cathodoluminescence of InGaAs/AlGaAs Tetrahedral Pyramidal Quantum structures

Elyahou Kapon, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Martin Henrik Baier, Andrea Crottini, Samuel Sonderegger, Michele Merano

Springer-Verlag2006