Publication

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire

Jean-Daniel Ganière, Klaus Leifer
1999
Journal Articles

Abstract

We describe the first stage of the evolution of CL spectra, intensity and dislocation contrast under low keV electron beam for ELO-GaN with a low dislocation density. The UV and yellow intensities are decreased by beam irradiation. We have observed a broadening of the UV peak towards low energies followed by a red shift. This is explained in terms of an electron beam activation of non-radiative centers which relax partially the compressive strain, The dislocation contrast is lowered, but the dislocations become more non-radiative. We suggest that dislocations are preferential ways for the flux of non-radiative centers from the coalescence boundaries to the bulk. (C) 1999 Elsevier Science B.V. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/efb5cc8b-3168-47b1-bdbf-d6c5f8fda75f

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Jean-Daniel Ganière, Klaus Leifer
1999
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/efb5cc8b-3168-47b1-bdbf-d6c5f8fda75f

About this result

Related concepts (32)

Dislocation

In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation.

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Scanning electron microscope

A scanning electron microscope (SEM) is a type of electron microscope that produces images of a sample by scanning the surface with a focused beam of electrons. The electrons interact with atoms in the sample, producing various signals that contain information about the surface topography and composition of the sample. The electron beam is scanned in a raster scan pattern, and the position of the beam is combined with the intensity of the detected signal to produce an image.