Publication

Determination of the Lateral Distribution of Electron-Hole Pairs Generated by an Electron-Beam in Al0.4Ga0.6As by Cathodoluminescence

Jean-Daniel Ganière, François Morier-Genoud
1994
Journal Articles

Abstract

The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A multiple-quantum-well structure acts as a detector to measure the relative number of generated carriers by their radiative recombination. The method, which avoids the effect of carrier diffusion, enhances the resolution of the measurement to 50 nm and should prove a help for the quantitative interpretation of cathodoluminescence evaluations.

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https://infoscience.epfl.ch/entities/publication/3f0387a7-4c63-4e91-86dd-141d13c8eb92

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Jean-Daniel Ganière, François Morier-Genoud
1994
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/3f0387a7-4c63-4e91-86dd-141d13c8eb92

About this result

Related concepts (32)

Scanning electron microscope

A scanning electron microscope (SEM) is a type of electron microscope that produces images of a sample by scanning the surface with a focused beam of electrons. The electrons interact with atoms in the sample, producing various signals that contain information about the surface topography and composition of the sample. The electron beam is scanned in a raster scan pattern, and the position of the beam is combined with the intensity of the detected signal to produce an image.

Carrier generation and recombination

In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Related publications (1)

Determination of the Lateral Distribution of Electron-Hole Pairs Generated by an Electron-Beam in Al0.4Ga0.6As by Cathodoluminescence

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Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN