Lecture

Nanogap Electrodes: Electromigration and Modeling

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In course

MICRO-435: Quantum and nanocomputing

The course teaches non von-Neumann architectures. The first part of the course deals with quantum computing, sensing, and communications. The second focuses on field-coupled and conduction-based nanocomputing, in-memory and molecular computing, cellular au ...

Description

This lecture explores the synergy between nanomaterial and CMOS electronics for (bio)sensing applications, focusing on the electromigration method for nanogap electrodes. The lecture covers topics such as the electromigration of metal atoms, the importance of gold probes, electrothermal modeling, and the electrothermal simulation performed by COMSOL. It also delves into the electrothermal model for nanogap fabrication, numerical atomic flux, and the system implemented for controlling experiments. The lecture concludes with discussions on lithography mask layout, chip bonding, and the application of electromigration models in nanoelectronics.

Official source

Related concepts (32)

Electromigration

Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in electronics such as integrated circuits (ICs) decreases, the practical significance of this effect increases.

Three-dimensional integrated circuit

A three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.

Wire bonding

Wire bonding is the method of making interconnections between an integrated circuit (IC) or other semiconductor device and its packaging during semiconductor device fabrication. Although less common, wire bonding can be used to connect an IC to other electronics or to connect from one printed circuit board (PCB) to another. Wire bonding is generally considered the most cost-effective and flexible interconnect technology and is used to assemble the vast majority of semiconductor packages.

System on a chip

A system on a chip or system-on-chip (SoC ,ˈɛsoʊsiː; pl. SoCs ,ˈɛsoʊsiːz) is an integrated circuit that integrates most or all components of a computer or other electronic system. These components almost always include on-chip central processing unit (CPU), memory interfaces, input/output devices, input/output interfaces, and secondary storage interfaces, often alongside other components such as radio modems and a graphics processing unit (GPU) – all on a single substrate or microchip.

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

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