Lecture

Scanning Probe Microscopy: Techniques and Applications

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In course

PHYS-405: Experimental methods in physics

The course's objectivs are: Learning several advenced methods in experimental physics, and critical reading of experimental papers. ...

Description

This lecture introduces Scanning Probe Microscopy (SPM) and its history, including the development of STM and AFM. It covers the principles of SPM, such as quantum tunneling and Van-der-Waals forces, and discusses the challenges in achieving high resolution. The use of feedback mechanisms in SPM, the comparison with other microscopy techniques, and the importance of tip-sample interactions are also explored. Applications in semiconductor research and industry are highlighted, emphasizing the significance of SPM in surface analysis and topography measurements.

Instructors (2)

Benjamin Dwir

Academic title: Dr. Birth date: 24.10.1959 Nationality: Swiss At EPFL since: 1988

Marco Cantoni

1982-1988, Diploma course in Experimental Physics (certificate, 28.10.88)ETHZ Faculty IX MATHEMATICS and PHYSICS, Diploma Thesis: "Abweichungen von der ikosaedrischen Symmetrie in Al-Cu-Li Quasikristallen", Advisor: Prof. H.-U. Nissen 1989-1993, Ph.D. in Experimental Physics (certificate, 23.8.94) ETHZ Physics Department, Laboratory of Solid State Physics, Ph. D. Thesis No. 10421, Title: "Elektronenmikroskopische Untersuchung der Realkristallstruktur epitaktischer Schichten von Supraleitern des Typs SEBa2Cu3O7-x auf (100)-SrTiO3" Advisors: Prof. H.R. Ott, Prof. H. U. Nissen. 1994-1996,ETH Zürich,Material Science Department, Non-Metallic Materials, Prof. L. Gauckler: Microstructure characterisation of high-tech ceramic materials by means of SEM, TEM and atomic force microscopy: superconductor thick films (Bi-2212 on Ag) and solid oxide fuel cells (ZrO2, CeO2). 1996-1998, National Institute for Research in Inorganic Materials NIRIM, Japan Group for Special Research, Prof. S. Horiuchi: TEM of Bi-2223/Ag Tapes, Application of Imaging Plates (IP) in High Voltage TEM, Cryo-Lorentz-TEM of Superconducting Materials (Observation of Flux-Lines) 1998-2000, Ecole polytechnique fédéral de Lausanne, EPFL-CIME Centre interdépartemental de microscopie électronique CIME, Prof. P.A. Buffat: Projet 125, PPO II (programme prioritaire optique): Characterization of materials and devices for optic and optoelectronic applications by electron microscopy. 2001-2003, Ecole polytechnique fédéral de Lausanne, EPFL STI IMX LCCeramics Laboratory, Prof. Nava Setter Characterisation of ferroelectric materials, transmission electron microscopy of relaxor ferroelectric materials 2004, University of Geneva, Physics Department, Condensed matter Physics Group of Prof. R. Flükiger, TEM of Multifilament Nb3Sn superconducting wires, in collaboration with EPFL-CIME Since 1.11.04, EPFL-SB-CIME

Official source

Related concepts (26)

Atomic force microscopy

Atomic force microscopy (AFM) or scanning force microscopy (SFM) is a very-high-resolution type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit. Atomic force microscopy (AFM) is a type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit.

Scanning probe microscopy

Scanning probe microscopy (SPM) is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen. SPM was founded in 1981, with the invention of the scanning tunneling microscope, an instrument for imaging surfaces at the atomic level. The first successful scanning tunneling microscope experiment was done by Gerd Binnig and Heinrich Rohrer. The key to their success was using a feedback loop to regulate gap distance between the sample and the probe.

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Scanning tunneling microscope

A scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm (10 pm) depth resolution. This means that individual atoms can routinely be imaged and manipulated.

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