Lecture

Scanning Probe Microscopy: Fundamentals

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In course

PHYS-405: Experimental methods in physics

The course's objectivs are: Learning several advenced methods in experimental physics, and critical reading of experimental papers. ...

Description

This lecture introduces Scanning Probe Microscopy (SPM), covering its history, comparison with other microscopy techniques, advantages, and challenges. It explains the principles of SPM, including Quantum Tunneling, and discusses the development of SPM instruments like the Stylus Profilometer and the Piezo Scanner. The lecture also explores the application of SPM in semiconductor research and industry, emphasizing the high spatial resolution and 3D imaging capabilities it offers.

Instructors (2)

Benjamin Dwir

Academic title: Dr. Birth date: 24.10.1959 Nationality: Swiss At EPFL since: 1988

Marco Cantoni

1982-1988, Diploma course in Experimental Physics (certificate, 28.10.88)ETHZ Faculty IX MATHEMATICS and PHYSICS, Diploma Thesis: "Abweichungen von der ikosaedrischen Symmetrie in Al-Cu-Li Quasikristallen", Advisor: Prof. H.-U. Nissen 1989-1993, Ph.D. in Experimental Physics (certificate, 23.8.94) ETHZ Physics Department, Laboratory of Solid State Physics, Ph. D. Thesis No. 10421, Title: "Elektronenmikroskopische Untersuchung der Realkristallstruktur epitaktischer Schichten von Supraleitern des Typs SEBa2Cu3O7-x auf (100)-SrTiO3" Advisors: Prof. H.R. Ott, Prof. H. U. Nissen. 1994-1996,ETH Zürich,Material Science Department, Non-Metallic Materials, Prof. L. Gauckler: Microstructure characterisation of high-tech ceramic materials by means of SEM, TEM and atomic force microscopy: superconductor thick films (Bi-2212 on Ag) and solid oxide fuel cells (ZrO2, CeO2). 1996-1998, National Institute for Research in Inorganic Materials NIRIM, Japan Group for Special Research, Prof. S. Horiuchi: TEM of Bi-2223/Ag Tapes, Application of Imaging Plates (IP) in High Voltage TEM, Cryo-Lorentz-TEM of Superconducting Materials (Observation of Flux-Lines) 1998-2000, Ecole polytechnique fédéral de Lausanne, EPFL-CIME Centre interdépartemental de microscopie électronique CIME, Prof. P.A. Buffat: Projet 125, PPO II (programme prioritaire optique): Characterization of materials and devices for optic and optoelectronic applications by electron microscopy. 2001-2003, Ecole polytechnique fédéral de Lausanne, EPFL STI IMX LCCeramics Laboratory, Prof. Nava Setter Characterisation of ferroelectric materials, transmission electron microscopy of relaxor ferroelectric materials 2004, University of Geneva, Physics Department, Condensed matter Physics Group of Prof. R. Flükiger, TEM of Multifilament Nb3Sn superconducting wires, in collaboration with EPFL-CIME Since 1.11.04, EPFL-SB-CIME

Official source

Related concepts (30)

Scanning probe microscopy

Scanning probe microscopy (SPM) is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen. SPM was founded in 1981, with the invention of the scanning tunneling microscope, an instrument for imaging surfaces at the atomic level. The first successful scanning tunneling microscope experiment was done by Gerd Binnig and Heinrich Rohrer. The key to their success was using a feedback loop to regulate gap distance between the sample and the probe.

Atomic force microscopy

Atomic force microscopy (AFM) or scanning force microscopy (SFM) is a very-high-resolution type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit. Atomic force microscopy (AFM) is a type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit.

Super-resolution microscopy

Super-resolution microscopy is a series of techniques in optical microscopy that allow such images to have resolutions higher than those imposed by the diffraction limit, which is due to the diffraction of light. Super-resolution imaging techniques rely on the near-field (photon-tunneling microscopy as well as those that use the Pendry Superlens and near field scanning optical microscopy) or on the far-field.

Microscopy

Microscopy is the technical field of using microscopes to view objects and areas of objects that cannot be seen with the naked eye (objects that are not within the resolution range of the normal eye). There are three well-known branches of microscopy: optical, electron, and scanning probe microscopy, along with the emerging field of X-ray microscopy. Optical microscopy and electron microscopy involve the diffraction, reflection, or refraction of electromagnetic radiation/electron beams interacting with the specimen, and the collection of the scattered radiation or another signal in order to create an image.

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

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Scanning Probe Microscopy

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