Lecture

Dynamic Inverter Characteristics

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

In course

EE-429: Fundamentals of VLSI design

The course introduces the fundamentals of digital integrated circuits and the technology aspects from a designers perspective. It focuses mostly on transistor level, but discusses also the extension to large digital semicustom designs. ...

Description

This lecture covers the dynamic behavior of digital circuits, focusing on inverter delay, sizing for minimum delay, and the impact of parasitic capacitances. It explains delay parameters, parasitic capacitances of transistors, simple delay models, RC delay models, equivalent resistance computation, and optimization of PMOS/nMOS ratio for minimum delay. The instructor discusses the effect of device sizing on delay, the importance of balancing PMOS/nMOS ratio, and how to minimize propagation delay by adjusting device parameters.

Instructors (2)

Andreas Peter Burg

Andreas Burg was born in Munich, Germany, in 1975. He received his Dipl.-Ing. degree in 2000 from the Swiss Federal Institute of Technology (ETH) Zurich, Zurich, Switzerland. He then joined the Integrated Systems Laboratory of ETH Zurich, from where he graduated with the Dr. sc. techn. degree in 2006. In 1998, he worked at Siemens Semiconductors, San Jose, CA. During his doctoral studies, he was an intern with Bell Labs Wireless Research for a total of one year. From 2006 to 2007, he held positions as postdoctoral researcher at the Integrated Systems Laboratory and at the Communication Theory Group of the ETH Zurich. In 2007 he co-founded Celestrius, an ETH-spinoff in the field of MIMO wireless communication, where he was responsible for the ASIC development as Director for VLSI. In January 2009, he joined ETH Zurich as SNF Assistant Professor and as head of the Signal Processing Circuits and Systems group at the Integrated Systems Laboratory. In January 2011, he became a Tenure Track Assistant Professor at the Ecole Polytechnique Federale de Lausanne (EPFL) where he is leading the Telecommunications Circuits Laboratory in the School of Engineering. In June 2018 he was promoted to the role of a Tenured Associate Professor. In 2000, Mr. Burg received the Willi Studer Award and the ETH Medal for his diploma and his diploma thesis, respectively. Mr. Burg was also awarded an ETH Medal for his Ph.D. dissertation in 2006. In 2008, he received a 4-years grant from the Swiss National Science Foundation (SNF) for an SNF Assistant Professorship. In his professional career, Mr. Burg was involved in the development of more than 25 ASICs. He is a member of the IEEE and of the European Association for Signal Processing (EURASIP). Research interests and expertise

Circuits and systems for telecommunications (wireless and wired)
Prototyping and silicon implementation of new communication technologies
Development of communication algorithms and optimization for hardware implementation
Low-power VLSI signal processing for communications and other applications
Digital integrated circuits
Circuits for image and video processing

Alexandre Sébastien Julien Willommet

Education 3D high density memory based on emering resistive technologies : circuit and architecture design | Microelectronics 2014 – 2017 CEA-Leti Teaching & PhD Courses Fundamentals of VLSI design EE-429 The course introduces the fundamentals of digital integrated circuits and the technology aspects from a designers perspective. It focuses mostly on transistor level, but discusses also the extension to large digital semicustom designs. Lab in advanced VLSI design

Official source

Related concepts (32)

Parasitic capacitance

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. When two electrical conductors at different voltages are close together, the electric field between them causes electric charge to be stored on them; this effect is capacitance. All practical circuit elements such as inductors, diodes, and transistors have internal capacitance, which can cause their behavior to depart from that of ideal circuit elements.

Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Capacitance

Capacitance is the capability of a material object or device to store electric charge. It is measured by the charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: self capacitance and mutual capacitance. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground.

Related lectures (64)

Digital Logic Circuits: CMOS and Verilog Modeling

Discusses digital logic circuits, focusing on CMOS technology and Verilog modeling techniques.

Logical Effort: Fundamentals of VLSI Design

Covers the Logical Effort method for optimizing logic delay and gate sizing impact.

Designing 3-Dimensional NAND Circuits: Key Considerations

Covers the design considerations for 3-dimensional NAND circuits, focusing on transistor sizing and performance optimization.

Analog CMOS Integrated Circuits: Fundamentals

Covers the fundamentals of analog CMOS integrated circuits, emphasizing transistor-level design principles and the historical impact of CMOS technology.

Timing Analysis: Synchronous Circuit Design