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Related publications (32)

On-Chip Fully Reconfigurable Artificial Neural Network in 16 nm FinFET for Positron Emission Tomography

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Andrada Alexandra Muntean

Smarty is a fully-reconfigurable on-chip feed-forward artificial neural network (ANN) with ten integrated time-to-digital converters (TDCs) designed in a 16 nm FinFET CMOS technology node. The integration of TDCs together with an ANN aims to reduce system ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Cascaded all-optical quantization employing step-size MMI and shape-optimized power splitter

Jijun He

As a key unit of future high-throughput communications, optical analog to digital converter (OADC) with all-optical quantizer element that simultaneously possesses high resolution, large bandwidth and compact size is highly promising. A pending issue of co ...

ELSEVIER SCI LTD2023

Integrated electronics for time-of-flight positron emission tomography photodetectors

Andrada Alexandra Muntean

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

EPFL2023

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

Metasurface-stabilized optical microcavities

Ileana-Cristina Benea-Chelmus

Cavities concentrate light and enhance its interaction with matter. Confining to microscopic volumes is necessary for many applications but space constraints in such cavities limit the design freedom. Here we demonstrate stable optical microcavities by cou ...

Nature Portfolio2023

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Victor Carle Adrien Boureau

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability an ...

AIP Publishing2022

Low-Cost Side-Channel Secure Standard 6T-SRAM-Based Memory With a 1% Area and Less Than 5% Latency and Power Overheads

Robert Giterman

Side-channel attacks constitute a concrete threat to IoT systems-on-a-chip (SoCs). Embedded memories implemented with 6T SRAM macrocells often dominate the area and power consumption of these SoCs. Regardless of the computational platform, the side-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and ...

IEEE2021

Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications

Luis Guillermo Villanueva Torrijo

Graphene's unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the inte ...

2020

Power Analysis Resilient SRAM Design Implemented with a 1% Area Overhead Impedance Randomization Unit for Security Applications

Robert Giterman

Power analysis attacks are an effective tool to extract sensitive information using side-channel analysis, forming a serious threat to IoT systems-on-a-chip (SoCs). Embedded memories implemented with conventional 6T SRAM macrocells often dominate the area ...

IEEE2019

A Large Range of Motion 3D MEMS Scanner With Five Degrees of Freedom

Matthias Imboden

Here, we discuss a novel, mixed mode 3D XYZ scanner built within a single foundry process. The device has a large range of motion in X, Y, and Z (14.1 mu m in X and Y and 97.9 mu m in Z) and can also rotate about two axes (7.4 degrees), making it a 5 degre ...

Institute of Electrical and Electronics Engineers2019

Adaptive Receiver Design for High Speed Optical Communication

Ilter Ozkaya

Conventional input/output (IO) links consume power, independent of changes in the bandwidth demand by the system they are deployed in. As the system is designed to satisfy the peak bandwidth demand, most of the time the IO links are idle but still consumin ...

EPFL2018

Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Edouard Giacomin

Routing multiplexers based on pass-transistors or transmission gates are an essential components in many digital integrated circuits. However, whatever structure is employed, CMOS multiplexers have two major limitations: 1) their delay is linearly related ...

Ieee-Inst Electrical Electronics Engineers Inc2017

Cryogenic Fab-on-a-Chip Sticks the Landing

Matthias Imboden

Using a microelectromechanical systems (MEMS)-based Fab-on-a-Chip, we quench-condense lead thin-films. Suppressing the formation of lead islands makes it possible to grow a homogeneous and continuous film as thin as 2 nm, without the use of an adhesion lay ...

Amer Chemical Soc2017

Superplastic behavior of silica nanowires obtained by direct patterning of silsesquioxane-based precursors

Yusuf Leblebici

Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are ac ...

Institute of Physics2017

Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Chunmin Zhang, Alessandro Pezzotta

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. Fo ...

2017

A Monolithic Approach to Downscaling Silicon Piezoresistive Sensors

Yusuf Leblebici

Multi-scale integration remains the primary challenge in the fabrication of miniature piezoresistive sensors, as the co-fabrication of a silicon nanowire along with a microscale shuttle is the main architecture facilitating high-sensitivity transduction. T ...

Institute of Electrical and Electronics Engineers2017

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Edoardo Charbon

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a mu ...

Nature Research2017

A Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Hassan Ghasemzadeh Mohammadi

This paper deals with the effects of faults on circuits implemented with controllable-polarity transistors. We propose a new fault model that suits the characteristics of these devices, and report the results of a SPICE-based analysis of the effects of fau ...

2016