Publication

Characterization of a 3-D stacked CMOS SPAD depth sensor in 45/22-nm technology

2026

Abstract

In this article, the characterization of a 3-D stacked direct time-of-flight (dToF) depth sensor consisting of 256 × 128 single-photon avalanche diodes (SPADs) is examined. The sensor is fabricated in 45nm/22nm CMOS technology and its target use is in light detection and ranging (LiDAR) applications. The sensor is composed of identical digitally synthesized modules. Each module consists of 2 × (16 × 8) pixels with SPAD front-end circuitry and coincidence detection tree, time to digital converter, 4-bit photon counters, and readout. The functionality of the sensor has been demonstrated using telemetry measurements and flash 3-D imaging, and the SPAD characterization of the entire array has also been examined. The sensor’s range-finding capability has been demonstrated up to 100 meters under 10 klux sunlight. By utilizing progressive gating, a 31.7 dB improvement in signal-to-noise ratio (SNR) is achieved. Coincidence photons up to rank 3 are detected, resulting in a 17 dB improvement in SNR. The sensor’s photon-counting ability is also demonstrated in real-time at 25 FPS under 20 klux daylight.

Official source

https://infoscience.epfl.ch/entities/publication/d2a2df75-8a0b-4a93-89dd-f6d3e7fd2fc2

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

2026

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/d2a2df75-8a0b-4a93-89dd-f6d3e7fd2fc2

About this result

Related concepts (32)

Signal-to-noise ratio

Signal-to-noise ratio (SNR or S/N) is a measure used in science and engineering that compares the level of a desired signal to the level of background noise. SNR is defined as the ratio of signal power to noise power, often expressed in decibels. A ratio higher than 1:1 (greater than 0 dB) indicates more signal than noise. SNR is an important parameter that affects the performance and quality of systems that process or transmit signals, such as communication systems, audio systems, radar systems, imaging systems, and data acquisition systems.

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

Carrier-to-noise ratio

In telecommunications, the carrier-to-noise ratio, often written CNR or C/N, is the signal-to-noise ratio (SNR) of a modulated signal. The term is used to distinguish the CNR of the radio frequency passband signal from the SNR of an analog base band message signal after demodulation. For example, with FM radio, the strength of the 100 MHz carrier with modulations would be considered for CNR, whereas the audio frequency analogue message signal would be for SNR; in each case, compared to the apparent noise.

Related publications (26)

Characterization of a 3-D stacked CMOS SPAD depth sensor in 45/22-nm technology

Chat with Graph Search

Thin-Wall Single-Crystal Gold Nanoelectrodes toward Advanced Chemical Probing and Imaging

A broadband mid-infrared detector based on photonic integrated circuits and trampoline mechanical resonators

Observing Fast Phase Transitions in Individual Nanocrystals through Single-Photon Detection