Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

Dangling bond

Related publications (32)

Investigating and controlling charge carrier behavior in p-type delafossite CuFeO₂ photocathodes for solar fuel production

Mathieu Steven Prévot

Humanity is facing the challenge of a global-scale energy transition over the next decades, where solar energy is set to play a crucial role. With the immense amount of sunlight reaching the surface or the Earth, and constantly decreasing manufacturing cos ...

EPFL2017

Impact of organic overlayers on a-Si:H/c-Si surface potential

Christophe Ballif, Stefaan De Wolf, Björn Niesen, Johannes Peter Seif, Andrea Tomasi

Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the pres ...

American Institute of Physics2017

Ice VII from aqueous salt solutions: From a glass to a crystal with broken H-bonds

Livia Eleonora Bove Kado

It has been known for decades that certain aqueous salt solutions of LiCl and LiBr readily form glasses when cooled to below approximate to 160 K. This fact has recently been exploited to produce a "salty" high-pressure ice form: When the glass is compress ...

Nature Research2016

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Quentin Thomas Jeangros, Xavier Niquille, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Philippe Wyss

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting ...

2016

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Using density functional calculations, we study a set of candidate defects for Fermi-level pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and interfacial defects, including As antisites, Ga and As dangling bonds, th ...

American Physical Society2015

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Interfacial Ga-As suboxide: Structural and electronic properties

Alfredo Pasquarello, Davide Colleoni

The structural and electronic properties of Ga-As suboxide representative of the transition region at the GaAs/oxide interface are studied through density functional calculations. Two amorphous models generated by quenches from the melt are taken under con ...

American Institute of Physics2015

Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

An arsenic related defect at the In0.53Ga0.47As/oxide interface is studied through density functional theory. This defect corresponds to an As-As timer which transforms into two doubly occupied As dangling bonds upon capture of two electrons. The defect ch ...

Elsevier2015

Wire-sawing processes: parametrical study and modeling

Christophe Ballif, Mathijs Pieter van der Meer

Reducing the wafer breakage rate without changing the wafer thickness and sawing thinner wafers while maintaining constant breakage rate are two possibilities to decrease the costs of solar cells. They are similar in the sense that both require stronger wa ...

Elsevier2015

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

Mihai Adrian Ionescu, Sara Rigante

The present invention relates to a method of producing a FinFET sensor device comprising the steps of: providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surfac ...

2015

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

Charge transition levels of the As-As dimer and the Ga dangling bond at GaAs/Al2O3 interfaces are determined through density-functional calculations. The same parent interface model structure is used as a starting point for creating both defects providing ...

Elsevier2014