Nearly perfect GaN crystal via pit-assisted growth by HVPE

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

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Wire-arc directed energy deposition (wire-arc DED), recognized for its ability to produce large-scale parts, has gained considerable attention. However, a critical issue with this method is the high prevalence of internal porosity defects found in the manu ...

Nearly perfect GaN crystal via pit-assisted growth by HVPE

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