Nearly perfect GaN crystal via pit-assisted growth by HVPE

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

Superlattice formation afforded by metal halide perovskite nanocrystals has been a phenomenon of interest due to the high structural order induced in these self-assemblies, an order that is influenced by the surface chemistry and particle morphology of the ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those pho ...

In this thesis work, we propose to exploit an innovative micro/nano-fabrication process, based on controlled fluid instabilities of a thin viscous film of chalcogenide glass. Amorphous selenium and arsenic triselenide were used in this thesis work, and com ...

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

The rising atmospheric level of carbon dioxide, CO2, contributes to climate change and poses urgent need to find scalable solutions both to decrease its emissions and to be able to recycle it, if the goals of Paris Agreement to limit the temperature rise a ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

Mo-Ti alloys form solid solutions over a wide range of compositions, with lattice misfit parameters increasing significantly with titanium content. This indicates a strong increase in the critical stress for edge dislocation motion. Here, we probe the tran ...

The availability of thin-film lithiumniobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-s ...

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

Transient electronics offer a promising solution for reducing electronic waste and for use in implantable bioelectronics, yet their fabrication remains challenging. We report on a scalable method that synergistically combines chemical and photonic mechanis ...

Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, verticall ...

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

Wire-arc directed energy deposition (wire-arc DED), recognized for its ability to produce large-scale parts, has gained considerable attention. However, a critical issue with this method is the high prevalence of internal porosity defects found in the manu ...

Nearly perfect GaN crystal via pit-assisted growth by HVPE

Chat with Graph Search

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Silicon nitride electric-field poled microresonator modulator

Long live(d) CsPbBr3 superlattices: colloidal atomic layer deposition for structural stability

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

All-Dielectric Nanophotonic via Glass Fluid Instabilities

Scalable Approaches to III-V Nanowires for Photodetection

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Voltage-driven Reactivity of Liquid Ga and CuGa Nanoparticles for Electrocatalytic CO2 Reduction and Synthesis

Semiconductor-based device architectures in multimaterial fibers

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

The influence of lattice misfit on screw and edge dislocation-controlled solid solution strengthening in Mo-Ti alloys

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

GeSn as next-generation material for short-wave infrared single-photon detection

Zinc hybrid sintering for printed transient sensors and wireless electronics

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Simultaneous strength and ductility enhancement of wire-arc directed energy deposited Al-Cu alloy by interlayer laser shock peening