Technology scaling makes metal delay ever more problematic, but routing between Look-Up Tables (LUTs) still passes through a series of transistors. It seems wise to avoid the corresponding delay whenever possible. Direct connections between LUTs, both with ...
Cryogenic solid-state quantum processors require classical control and readout electronics; to achieve compactness and scalability, cryogenic integrated circuits have been recently proposed for this goal. Circulators are widely used in readout circuits, ho ...
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...
The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...
As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...
At the FSE conference of ToSC 2018, Kranz et al. presented their results on shortest linear programs for the linear layers of several well known block ciphers in literature. Shortest linear programs are essentially the minimum number of 2-input xor gates r ...
Modern grids are facing a massive integration of power electronics devices, usually associated to instability issues. In order to assess the likelihood and severity of harmonic instability in the high frequency region, this work develops a multi-variable i ...
This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...
Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions en ...
III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...
