Publication

Circuit Level Modeling Methodology of Parasitic Substrate Current Injection from a High-Voltage H-bridge at High Temperature

Publications associées (31)

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Pirouz Sohi, Catherine Erine, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

Data Structures and Algorithms for Logic Synthesis in Advanced Technologies

Eleonora Testa

Logic synthesis is a key component of digital design and modern EDA tools; it is thus an essential instrument for the design of leading-edge chips and to push the limits of their performance. In the last decades, the electronic circuits community has evolv ...

EPFL2020

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

Jean-Michel Sallese, Chiara Rossi

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model. Conver ...

2020

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

2020

A Logic Synthesis Toolbox for Reducing the Multiplicative Complexity in Logic Networks

Giovanni De Micheli, Luca Gaetano Amarù, Eleonora Testa, Mathias Soeken, Heinz Riener

Logic synthesis is a fundamental step in the realization of modern integrated circuits. It has traditionally been employed for the optimization of CMOS-based designs, as well as for emerging technologies and quantum computing. Recently, it found applicatio ...

IEEE2020

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultra-Low Power Processors

David Atienza Alonso, Ruben Braojos Lopez, Loris Gérard Duch, Miguel Peon Quiros, Alexandre Sébastien Julien Levisse

Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, BTI is a degradation effect that changes the threshold voltag ...

2020

Logic-in-memory based on an atomically thin semiconductor

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Ahmet Avsar, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020