Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

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Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

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