Publication

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Publications associées (32)

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Didem Dede, Valerio Piazza

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

Optical manipulation of plasmonic nanoparticles: Applications in surface chemistry and nano-optics

Jeonghyeon Kim

Optical tweezers are devices that can manipulate nano- and microparticles using a laser. The principle of optical tweezers is to apply a force to an object using the momentum of light. This force is very small, but it is sufficient to move things in the mi ...

EPFL2023

Murunskite - a new class of functional material

Davor Tolj

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

Jean-Marc Triscone, Duncan Thomas Lindsay Alexander, Jonathan Spring, Bernat Mundet

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

WILEY2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Raffaella Buonsanti, Anna Loiudice, Pascal Alexander Schouwink, Valery Okatenko, Coline Marie Agathe Boulanger, Alexander Nicolas Chen, Krishna Kumar

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

2023

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Akshay Balgarkashi, Didem Dede, Elif Nur Dayi, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Michal Daniel Macha, Mukeshchand Thakur, Jing Zhang, Mukesh Kumar Tripathi, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022