Residual stress chevron preloading amplifier for large-stroke stiffness reduction of silicon flexure mechanisms

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Infrared light management is crucial to maximize the optical performance of crystalline Si-based single junction and tandem solar cells. For this end, a low refractive index dielectric is typically inserted under the rear metal and an electrical contact is ...

The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

Perovskite-silicon (Si) tandem solar cells are the most prominent contenders to succeed single-junction Si cells that dominate the market today. Yet, to justify the added cost of inserting a perovskite cell on top of Si, these devices should first exhibit ...

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...

This paper explores, by means of continuum finite element (CFE) analysis, a recently developed concept that promotes controlled inelastic energy dissipation within the embedded portion of column base connections rather than in steel columns of conventional ...

Historically, the field of plasmonics has been relying on the framework of classical electrodynamics, with the local-response approximation of material response being applied even when dealing with nanoscale metallic structures. However, when the confineme ...

Residual stress chevron preloading amplifier for large-stroke stiffness reduction of silicon flexure mechanisms

Chattez avec Graph Search

Self-Aligned Silica Nanoparticle Rear Reflectors for Single-Junction Si and Perovskite-Si Tandem Solar Cells

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

Synergetic substrate and additive engineering for over 30%-efficient perovskite-Si tandem solar cells

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Finite element modeling and behavior of dissipative embedded column base connections under cyclic loading

Extremely confined gap plasmon modes: when nonlocality matters