Publications associées à Epitaxial Piezoelectric MEMS on Silicon

Publications associées (31)

Mapping orthorhombic domains with geometrical phase analysis in rare-earth nickelate heterostructures

Duncan Thomas Lindsay Alexander, Bernat Mundet

Most perovskite oxides belong to the Pbnm space group, composed of an anisotropic unit cell, A-site antipolar displacements, and oxygen octahedral tilts. Mapping the orientation of the orthorhombic unit cell in epitaxial heterostructures that consist of at ...

Aip Publishing2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

A continuous-wave and pulsed X-band electron spin resonance spectrometer operating in ultra-high vacuum for the study of low dimensional spin ensembles

Giovanni Boero, Fabio Donati, Soyoung Oh

We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and utilizes a half-wavele ...

Aip Publishing2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Ultrahigh-quality-factor micro- and nanomechanical resonators using dissipation dilution

Tobias Kippenberg, Nils Johan Engelsen, Alberto Beccari

Mechanical resonators are widely used in sensors, transducers and optomechanical systems, where mechanical dissipation sets the ultimate limit to performance. Over the past 15 years, the quality factors in strained mechanical resonators have increased by f ...

Nature Portfolio2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

Kyojin Choo

This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

Federico Peretti, Luis Guillermo Villanueva Torrijo, Silvan Stettler, Marco Liffredo, Nan Xu

Sc-doped aluminum nitride (AlScN) allows for piezoelectric devices with large electromechanical coupling and the benefits increase with larger Sc doping in the film. However, with a larger Sc concentration, the process window narrows, and it is necessary t ...

2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

DC Power Distribution Networks with Direct Current Transformers

Renan Pillon Barcelos

The shift towards DC power distribution networks, enabled by power electronics technologies, is changing the nature of electrical power systems. Nowadays, DC power distribution networks can effectively support the high penetration of distributed energy res ...

EPFL2024

Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors

Raffaella Buonsanti, Anna Loiudice, Petru Pasquale Albertini, Ona Segura Lecina, Philippe Benjamin Green, Jari Leemans, Mark Adrian Newton, Coline Marie Agathe Boulanger, Krishna Kumar

Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxi ...

Amer Chemical Soc2024

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Yves Bellouard, Victor Carle Adrien Boureau, Ruben Ricca

Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...

2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Long live(d) CsPbBr3 superlattices: colloidal atomic layer deposition for structural stability

Raffaella Buonsanti, Philippe Benjamin Green, Alexander Nicolas Chen

Superlattice formation afforded by metal halide perovskite nanocrystals has been a phenomenon of interest due to the high structural order induced in these self-assemblies, an order that is influenced by the surface chemistry and particle morphology of the ...

Royal Soc Chemistry2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Pyroelectricity in poled all-organic polar polynorbornene/polydimethylsiloxane-based stretchable electrets

Frank Nüesch, Francis Owusu

Pyroelectricity in a recently developed all-organic composite electret with a polar polynorbornene-based filler and polydimethylsiloxane (PDMS) matrix has been studied with the help of thermal and dielectric techniques. Measurement of the pyroelectric p co ...

Royal Society of Chemistry2024

Power Aware Placement of On-Chip Voltage Regulators

Rassul Bairamkulov

In traditional power delivery networks, the on-chip supply voltage is provided by board-level converters. Due to the significant distance between the converter and the load, variations in the load current are not effectively managed, producing a significan ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024