Publication

Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

Publications associées (30)

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Michal Daniel Macha, Mukeshchand Thakur, Jing Zhang, Mukesh Kumar Tripathi, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

Synthesis and properties of heterostructures in nanowires and 2-D materials

Akshay Balgarkashi

Modern solid-state devices were made possible by the discovery of semiconductor heterostructures. Heterostructures offer the ability to fabricate low-dimensional nanostructures such as quantum dots which can restrain carriers in all three-directions. Quant ...

EPFL2022

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Scalable Nanowire Networks: Growth and Functionality

Martin George Friedl

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

Mechanisms shifting the emission energy of self-assembled quantum dots in nanowires

Luca Francaviglia

This thesis is dedicated to the engineering of the emission energy of quantum dots embedded in core-shell GaAs-AlGaAs nanowires. The goal is to redshift the quantum-dot emission energy in resonance with a gas of Rb atoms. Segregation processes on the nanow ...

EPFL2019

Geometrical optimisation of core-shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

Andrea Ingenito

Background: Elongated nanostructures, such as nanowires, have attracted significant attention for application in silicon-based solar cells. The high aspect ratio and characteristic radial junction configuration can lead to higher device performance, by inc ...

Beilstein Institut2019

Dibenzoquinquethiophene- and Dibenzosexithiophene-Based Hole-Transporting Materials for Perovskite Solar Cells

Mohammad Khaja Nazeeruddin, Tom Theodorus Antonius Lummen, Iwan Zimmermann, Javier Urieta Mora

Fused oligothiophene-based pi-conjugated organic derivatives have been widely used in electronic devices. In particular, two-dimensional (2D) heteroarenes offer the possibility of broadening the scope by extending the pi-conjugated framework, which endows ...

2019

Advances in the characterization of nanowire photovoltaic devices

Dmitry Mikulik

III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...

EPFL2018

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

GaAs nanowires: from doping to plasmonic hybrid devices

Alberto Casadei

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

Gwénolé Jean Jacopin

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN quantum disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodolum ...

Amer Physical Soc2016

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures

Anna Fontcuberta i Morral, Luca Francaviglia

We demonstrate the selective area growth of GaN-(Al,Ga)N core shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. ...

American Chemical Society2016

Growth of GaAs nanowires on Si (111) for photovoltaic applications

Federico Matteini

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016