Publication

Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

Publications associées (30)

Increased Photoconductivity Lifetimes in GaAs Nanowires via n-Type and p-Type Shell Doping

Anna Fontcuberta i Morral, Federico Matteini, Francesca Amaduzzi

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...

Ieee2016

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Alberto Casadei, Federico Matteini, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Hua Zhang, Gwénolé Jean Jacopin

We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully ...

Royal Soc Chemistry2015

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Heidi Andrea Potts, Tao Xu

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Gözde Tütüncüoglu, Federico Matteini, Fauzia Jabeen, Heidi Andrea Potts

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

Large-area MoS2 grown using H2S as the sulphur source

Andras Kis, Aleksandra Radenovic, Duncan Thomas Lindsay Alexander, Philippe Gillet, Oriol López Sánchez, Dmitry Ovchinnikov, Dumitru Dumcenco

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Eleonora Russo, Federico Matteini, Jelena Vukajlovic Plestina, Heidi Andrea Potts

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Esther Alarcon Llado, Federico Matteini

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Anna Fontcuberta i Morral, Martin Heiss, Gözde Tütüncüoglu, Eleonora Russo, Alberto Casadei, Federico Matteini

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

American Chemical Society2014

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Martin Heiss, Sylvain Dunand, Daniel Rüffer, Sonia Conesa Boj, Eleonora Russo

Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid het ...

Royal Society of Chemistry2013