Publication

Carbon Nanotube Precise Assembly for CMOS and NEMS Applications

Publications associées (31)

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Graphene/cotton fibers show significant promise in wearable energy storage due to their low cost, porous structure, and exceptional integration ability into wearable systems. However, the eco-unfriendly reductants and standalone electric double-layer capac ...

Elsevier Sci Ltd2024

Silicon nitride electric-field poled microresonator modulator

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Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

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We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

3D Printing of Customizable Transient Bioelectronics and Sensors

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Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

2024

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

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On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Wiley-VCH Verlag GmbH2024

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

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We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...

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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

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In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity

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Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...

Aip Publishing2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

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This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

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The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023