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EKV Model of the MOS Transistor

Christian Enz, Eric Vittoz
2006
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Christian Enz, Eric Vittoz
2006
Book Chapters

Source officielle

Publications associées (3)

https://infoscience.epfl.ch/entities/publication/de2db5cf-d83e-4fdc-b9d4-eaae7af07dc3

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Publications associées (3)

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

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The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Residual stress chevron preloading amplifier for large-stroke stiffness reduction of silicon flexure mechanisms

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Residual stresses can be advantageously used to permanently preload flexure micro-mechanisms in order to modify their deflection and stiffness. This paper presents a new preloading chevron mechanism (PCM) used to amplify the preloading effect of thin film ...

IOP Publishing2025

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Jean-Michel Sallese, Adil Koukab, Gennaro Termo

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...

Iop Publishing Ltd2024